Development of a silicon-diamond interface on (111) diamond

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Abstract

We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

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Schenk, A. K., Sear, M. J., Dontschuk, N., Tsai, A., Rietwyk, K. J., Tadich, A., … Pakes, C. I. (2020). Development of a silicon-diamond interface on (111) diamond. Applied Physics Letters, 116(7). https://doi.org/10.1063/1.5144093

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