Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications

Abstract

This paper presents Schottky barrier diode circuits fully integrated in a 0.13-μm SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of externai components. The upconverter has a size of 430 × 780 μm2 including on-chip matching elements and bond pads. It has a conversion gain of -6 to -7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of -4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of -6 dBm. The frequency doubler has a size of 360 × 500 μm2 and can deliver up to 2.5 dBm at 110 GHz. © 2008 IEEE.