Promise and Challenges of High-Voltage SiC Bipolar Power Devices

40Citations
Citations of this article
43Readers
Mendeley users who have this article in their library.

Abstract

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

Cite

CITATION STYLE

APA

Kimoto, T., Yamada, K., Niwa, H., & Suda, J. (2016). Promise and Challenges of High-Voltage SiC Bipolar Power Devices. Energies, 9(11). https://doi.org/10.3390/en9110908

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free