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Trilayer Tunnel Selectors for Memristor Memory Cells

Advanced Materials (2016) 28(2) 356-362
DOI: 10.1002/adma.201503604
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Abstract

An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.

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Choi, B. J., Zhang, J., Norris, K., Gibson, G., Kim, K. M., Jackson, W., … Williams, R. S. (2016). Trilayer Tunnel Selectors for Memristor Memory Cells. Advanced Materials, 28(2), 356–362. https://doi.org/10.1002/adma.201503604

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