Silicon Structures with Variable Morphology of Pores Methods of Obtaining Physical and Optical Properties

  • Starkov V
  • Gosteva E
  • Sedlovets D
  • et al.
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Abstract

© The Author(s) 2018. Published by ECS. This paper presents experimental results on the creation of porous silicon structures with variable pore morphology (GPS-var). At a pore depth of up to several hundred microns, the structures are characterized by the presence of a layer with nanoscale porous structures (hereinafter, nanoporous) on the surface. As the depth of etching increases, the pores smoothly transform into spongy, and then into a columnar structures with pore sizes of about a micron.

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Starkov, V. V., Gosteva, E. A., Sedlovets, D. M., & Kah, M. O. (2018). Silicon Structures with Variable Morphology of Pores Methods of Obtaining Physical and Optical Properties. Journal of The Electrochemical Society, 165(11), E534–E539. https://doi.org/10.1149/2.1101811jes

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