Response enhancement of pt–algan/gan hemt gas sensors by thin algan barrier with the source-connected gate configuration at high temperature

Abstract

AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500◦C. First, we found that the hydrogen sensing performance of a conventional normally-on HEMT-based sensor was enhanced when zero voltage was applied on the gate in comparison with a floating-gate condition due to a reduced level of the base current. In the next step, to take advantage of the response increase by VGS = 0 V, a new type of sensor with a source-connected gate (SCG) was fabricated to utilize the normally-on operation of the GaN HEMT sensor as a two-terminal device. AlGaN barrier thickness was thinned by the dry-etching process to gain higher transconductance at a zero-gate bias with the reduction of the distance from the 2DEG channel to the AlGaN surface, thereby significantly improve the hydrogen response. The SCG GaN sensor with an ultra-thin AlGaN barrier (9 nm) exhibited responses of 85% and 20% at 200 and 500◦C, respectively, onto 4%-hydrogen gas, which demonstrates a promising ability for harsh environment applications.