Atomic Layer Deposition of Ta-doped TiO2 Electrodes for Dye-Sensitized Solar Cells

  • Choi J
  • Kwon S
  • Jeong Y
  • et al.
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Abstract

Ta-doped TiO2 inverse opals were obtained by selective etching of a silica template after atomic layer deposition (ALD) of Ta-doped TiO 2 films and were applied as an electrode for dye-sensitized solar cells (DSSCs). Ta content in the Ta-doped TiO2 film was controlled by the Ta/(TaTi) unitcycle ratios in the Ta-TiO2 supercycle of ALD. Also, excellent step coverage of nearly 100 in the inverse opal structure was confirmed by field-emission scanning electron microscopy (FE-SEM). Maximum photoconversion efficiency of 1.56 was achieved with the Ta (3.4 atom %)-doped TiO2 inverse opal electrode due to increased photocurrent density. However, further Ta doping ( > 4.9 atom ) decreased the Jsc and photoconversion efficiency. © 2011 The Electrochemical Society.

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Choi, J.-H., Kwon, S.-H., Jeong, Y.-K., Kim, I., & Kim, K.-H. (2011). Atomic Layer Deposition of Ta-doped TiO2 Electrodes for Dye-Sensitized Solar Cells. Journal of The Electrochemical Society, 158(6), B749. https://doi.org/10.1149/1.3582765

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