Development of high electron mobility transistor

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Abstract

The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward commercialization. This article will focus on these events that the author feels might be of interest to young researchers. Recent progress and future trends in HEMT technology are also described. © 2005 The Japan Society of Applied Physics.

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APA

Mimura, T. (2005). Development of high electron mobility transistor. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(12), 8263–8268. https://doi.org/10.1143/JJAP.44.8263

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