Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

Abstract

The photocurrent spectra of the inter-band photoinduced anomalous Hall effect (PAHE) in insulating GaAs/AlGaAs quantum wells have been observed at room temperature. The PAHE current changes linearly with the varied longitudinal electric fields. The anomalous Hall conductivity corresponding to excitonic state 1HH-1E (the first valence subband of heavy hole to the first conduction) has the same sign with that of excitonic state 1LH-1E (the first valence subband of light hole to the first conduction), while under uniaxial strain along the 110 axes, they have different signs. The PAHE current of 1HH-1E decreases linearly, but that of 1LH-1E increases linearly with shear strain. The linearly dependence of the PAHE current on uniaxial strain along the 110 axes suggests that the dominant mechanism is intrinsic, which has not yet been confirmed in our previous work [Yu, Appl. Phys. Lett. 100, 142109 (2012)]. © 2013 AIP Publishing LLC.