BANDED STRUCTURE IN ALUMINIUM-SILICON EUTECTIC ALLOY.

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Abstract

Formation of the banded structure is governed by the solidification rate, temperature gradient at the solid-liquid interface and build-up of the liquid layer rich in the ternary additions rejected from the eutectic solid. Formation can be avoided even when the sodium content is in excess.

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Kobayashi, K., Shingu, P. H., & Ozaki, R. (1980). BANDED STRUCTURE IN ALUMINIUM-SILICON EUTECTIC ALLOY. Transactions of the Japan Institute of Metals, 21(7), 417–424. https://doi.org/10.2320/matertrans1960.21.417

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