Determination of drift mobility and lifetime for dominant charge carriers in polycrystalline CuInSe2 by photomixing

Abstract

Drift mobility and lifetime for the dominant charge carriers in polycrystalline CuInSe2 were determined for the first time by a photomixing technique. Evidence for a continuous distribution of localized states in the band gap near the extended states was provided. The temperature dependence of the photoconductive charge transport was found to be determined by multiple trapping processes.