Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption

Abstract

In this work, we demonstrate the coexistence of nonvolatile memory (NVM) and volatile threshold switching (VTS) behaviors in an Ag-embedded sodium-alginate-based memristor using the current pulse mode. High and low compliance currents allow the device to present stable and reliable NVM and VTS behaviors, respectively. Specifically, NVM and VTS behaviors randomly occur under a compliance current of 40 μA. On this basis, four polygon Boolean operations (AND, OR, NOT, and XOR) and physical unclonable functions (PUFs) with an inter-class Hamming distance of 50.75% are demonstrated simultaneously in memristive devices. Adopting PUF keys, image encryption and decryption are implemented by executing the XOR logic operation. Our memristive devices have the ability of in-memory computing and providing PUFs simultaneously and thus great potential for hardware security applications.