Circuit techniques in GaN technology for high‐temperature environments

Abstract

As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suita-ble candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology available from the National Research Council of Canada to serve RF applications. However, this technology has the potential to boost HT electronics to higher ranges of operating temperatures and to higher levels of integration. This paper summarizes the outcome of five years of research investi-gating the implementation of GaN500‐based circuits to support HT applications such as aerospace missions and deep earth drilling. More than 15 integrated circuits were implemented and tested. We performed the HT characterization of passive elements integrated in GaN500 including resis-tors, capacitors, and inductors up to 600 °C. Moreover, we developed for the first time several digital circuits based on GaN500 technology, including logic gates (NOT, NAND, NOR), ring oscillators, D Flip‐Flop, Delay circuits, and voltage reference circuits. The tested circuits are fabricated on a 4 mm × 4 mm chip to validate their functionality over a wide range of temperatures. The logic gates show functionality at HT over 400 °C, while the voltage reference circuits remain stable up to 550 °C.