A Novel Methodology to Predict Process-Induced Warpage in Advanced BEOL Interconnects

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Abstract

Process-induced warpage caused by high-density interconnects in the back-end of line (BEOL) structure, may affect the performance and the reliability of the product during the packaging process. In this paper, a BEOL structure is used to develop a process-oriented simulation methodology to optimize the design and predict warpage. To reduce simulation time and obtain accurate predictions, the equivalent material method and equivalent residual stress are used in our proposed method. The layer-by-layer warpage predictions matched the measurement data.

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Lin, Y. H., Lee, C. C., Liao, C. Y., Lin, M. H., Tu, W. C., Chen, R., … Cao, M. (2023). A Novel Methodology to Predict Process-Induced Warpage in Advanced BEOL Interconnects. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2023-March). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IRPS48203.2023.10117795

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