High current densities in a highly photoluminescent organic single-crystal light-emitting transistor

Abstract

We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices. © 2010 American Institute of Physics.