High-mobility n−-GaN drift layer grown on Si substrates

Abstract

We have investigated the interaction between carbon impurities and threading dislocations and their impact on the transport properties of GaN grown on Si substrates. The incorporation of carbon impurity was found to be associated with dislocation density, with a linear dependence. It indicates that the carbon may accumulate around the dislocations. The temperature-dependent Hall-effect measurement further confirmed that those carbon-decorated dislocations can act as acceptor-like traps, existing at every c-lattice spacing along a threading dislocation. The acceptor-like traps are important scattering centers and, thus, cannot be neglected. By reducing the density of the carbon-decorated dislocation via introducing a thick dislocation filtering layer to reduce the dislocation-related acceptor-like trap scattering, a record room-temperature electron mobility of 1090 cm2/V s with a carrier concentration of ∼2 × 1016 cm−3 for n--GaN on Si was achieved. Our results provide an effective approach to obtain high-quality n−-GaN on Si for vertical GaN based devices.