Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region

Abstract

Growth kinetics of nanometer-thick thermal oxides on 4H-SiC (0001), Si-face, was investigated. A linear oxide growth was clearly observed in this thickness region, indicating the oxide growth is limited by interface reaction. The activation energy of the interface reaction was estimated to be 3.8±0.1eV. The rate-limiting step in this reaction was discussed from both the value of activation energy and the oxygen partial pressure dependence of the growth rate. The enhanced growth limited only to the initial <2nm region was also observed, which is suggesting the change of the rate-limiting step for the interface reaction in the ultrathin region. © 2014 AIP Publishing LLC.