High-fidelity entangling gates for electron and nuclear spin qubits in diamond

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Abstract

Motivated by the recent experimental progress in exploring the use of a nitrogen-vacancy (NV) center in diamond as a quantum computing platform, we propose schemes for fast and high-fidelity entangling gates on this platform. Using both analytical and numerical calculations, we demonstrate that synchronization effects between resonant and off-resonant transitions may be exploited such that spin-flip errors due to strong driving may be eliminated by adjusting the gate time or the driving field. This allows for fast, high-fidelity entangling operations between the electron spin and one or several nuclear spins. We investigate a two-qubit system where the NV center comprises a N15 atom and a qubit-qutrit system for the case of a N14 atom. In both cases, we predict a complete suppression of off-resonant driving errors for two-qubit gates when addressing the NV electron spin conditioned on states of nuclear spins of the nitrogen atom of the defect. Additionally, we predict fidelities >0.99 for multiqubit gates when including the surrounding C13 atoms in the diamond lattice in the conditioned logic.

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APA

Finsterhoelzl, R., Hannes, W. R., & Burkard, G. (2025). High-fidelity entangling gates for electron and nuclear spin qubits in diamond. Physical Review B, 111(21). https://doi.org/10.1103/PhysRevB.111.214104

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