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Defect analysis in polycrystalline silicon solar cells

Journal of Applied Physics (1985) 57(12) 5506-5511
DOI: 10.1063/1.334828
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Abstract

Localized bulk defects like diffusion length variations and structural defects like grain boundaries are analyzed in polycrystalline silicon solar cells using laser scanning and deep level transient spectroscopy techniques. The effect of hydrogen passivation on the role of grain boundaries has been studied.

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Sastry, O. S., Dutta, V., Mukerjee, A. K., & Chopra, K. L. (1985). Defect analysis in polycrystalline silicon solar cells. Journal of Applied Physics, 57(12), 5506–5511. https://doi.org/10.1063/1.334828

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