Characterization upon electrical hysteresis and thermal diffusion of tial 3o x dielectric film

Abstract

In this paper, we have investigated the electrical properties of TiAl 3O x film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl 3O x/Si interfacial region in detail. The TiAl 3O x films show obvious electrical hysteresis by the capacitancevoltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl 3O x film and silicon, the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice. © 2011 Shi and Liu; licensee Springer.