SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to V-Band for Satellite Application

Abstract

— This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/Al-GaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 GHz to 75 GHz range to satisfy the demand-ing specifications of satellite communication systems. The design integrates AlN, GaN, and AlGaN layers to capitalize on the superior electrical properties of GaN-based transistors while guaranteeing robust isolation and performance enhancement through AlN and AlGaN integration. Design optimization fo-cuses on achieving high isolation, minimal insertion loss and fast switching speeds-all primordial parameters for satellite communication links. Characterization simulations explore im-provements in key metrics such as insertion loss, isolation, and switching time at V-band frequencies. In addition, the switch's performance is evaluated under varying temperature and radi-ation conditions to ensure reliability and suitability for space environments. Early findings suggest favorable performance attributes, hinting at the potential of the proposed SPSPT switch for V-band satellite applications, thereby contributing the progression of space-based RF technology..