Low-power and nanosecond switching in robust hafnium oxide resistive memory with a thin Ti cap

Abstract

The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in theHfO x layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (> 100), this memory also exhibits reliable switching endurance (≥ 106 cycles), robust resistance states (200 °C), high device yield (∼100%), and fast switching speed (< 10 ns). © 2006 IEEE.