Delta-doped β-gallium oxide field-effect transistor

Abstract

We report silicon delta doping in gallium oxide (β-Ga2O3) grown by plasma-Assisted molecular beam epitaxy using a shutter pulsing technique. We describe the growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was adopted to realize thin (12 nm) low-resistance layers with a sheet resistance of 320Ω/square (mobility of 83cm2Vcm-1 scm-1, integrated sheet charge of 2.4 ' 1014cm-2). A single delta-doped sheet of carriers was employed as a channel to realize a field-effect transistor with current ID,max = 236 mA/mm and transconductance gm = 26mS/mm.