Study of band gap surface states of silicon in a MOSFET using surface photovoltage spectroscopy (SPS)

Abstract

A study of band gap surface states of silicon in a MOSFET using surface photovoltage spectroscopy (SPS) is presented. The metal-oxide-semiconductor (MOS) structure inside the MOSFET was utilized in the measurements. Surface state energy positions, as well as surface state parameters that govern the charging and discharging of surface states, were determined from the surface photovoltage spectra and surface photovoltage transient plots respectively. © 2006 IOP Publishing Ltd.