Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN3)

Abstract

Thin films of AlN(0001) were grown by reacting hydrazoic acid (HN3) with an Al(111) substrate at temperatures below 800 K. The resulting films were characterized with Auger electron spectroscopy, low energy electron diffraction (LEED), and infrared reflection-absorption spectroscopy (IRRAS). The energies and line shapes of the Al LVV and N KLL Auger transitions were consistent with those of AlN. A hexagonal LEED pattern, in registry with that of the Al(111) substrate, was observed for the fully nitrided film and was consistent with a single-domain, AlN(0001) surface. Only the A1 LO phonon mode of AlN, at 886 cm−1, was observed in IRRAS, indicating a wurtzite-structured film with the c axis normal to the surface plane.