Strong coupling cavity QED with gate-defined double quantum dots enabled by a high impedance resonator

Abstract

The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π = 238 MHz at a resonator linewidth κ/2π = 12 MHz and a DQD charge qubit decoherence rate of γ2/2π = 40 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.