High-performance, reliable, 730-nm-emitting Al-free active region diode lasers

Abstract

Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (αi∼2cm-1) and narrow transverse far-field beam width (θ1/2=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T0=115 K and T1=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics.