Abstract
High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics. © 2010 American Chemical Society.
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CITATION STYLE
Zhang, W., Smith, J., Watkins, S. E., Gysel, R., McGehee, M., Salleo, A., … McCulloch, I. (2010). Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors. Journal of the American Chemical Society, 132(33), 11437–11439. https://doi.org/10.1021/ja1049324
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