Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots

Abstract

Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope. © 2001 American Institute of Physics.