Hotspot relaxation time in disordered niobium nitride films

Abstract

The hotspot relaxation time (τth) was systematically studied on superconducting nanowire single-photon detectors (SNSPDs) made from ultrathin NbN films with different substrates and chemical compositions. The τth values were measured to be between 9.2 ps and 41.1 ps at the bath temperature of 2.15 K. The temperature dependence of τth ∝ TC-1.5 was observed, which indicated a dominant electron-phonon scattering relaxation mechanism in disordered NbN films. In addition, the increase in τth results in a higher latching probability in NbN-based SNSPDs with the same electrical response time (τe). The experimental results confirmed that the devices suffered latching when the ratio of the electric and thermal relaxation time was less than 133. This observation is an interesting reference for the design and process optimization of SNSPDs.