On the optimization of InGaP/GaAs/InGaAs triple-junction solar cell

Abstract

This paper presents an optimization procedure for the design parameters of InGaP/GaAs/InGaAs Triple-Junction (TJ) solar cell by using SILVACO TCAD. The solar cell design parameters include layers' materials, thicknesses and doping concentrations. Firstly, the optimization technique is performed on an InGaP/GaAs/Ge cell. The Ge sub-cell is then replaced by an InGaAs sub-cell. A comparison between the performance parameters of InGaP/GaAs/InGaAs and InGaP/GaAs/Ge TJ solar cells is investigated. The compared parameters are the open circuit voltage (V OC ), short circuit current density (J SC ), Fill Factor (FF) and the conversion efficiency (η). Finally, a comparison between these optimized devices against some previously published work is presented. All simulations for triple-junction solar cells are accomplished under light intensity of 1-sun of standard AM1.5G solar spectrum at 300 K. The electrical characteristics for the proposed TJ solar cell are V OC = 2.9 V and J SC = 15.97 mA/cm 2 with conversion efficiency = 42.01%.