Single photon emission of a charge-tunable GaAs/Al0.25Ga 0.75As droplet quantum dot device

Abstract

In this work, we report the fabrication of a charge-tunable GaAs/Al 0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109cm -2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0)=0. 05). © 2014 AIP Publishing LLC.