High-performance indiumgalliumzinc oxide thin-film transistors based on anodic aluminum oxide

Abstract

Thin-film transistors (TFTs) based on indiumgalliumzinc oxide (IGZO) active layer and anodic aluminum oxide Al2O3 gate dielectric were investigated. The anodic Al2O3 gate dielectric possesses low leakage current and relatively high dielectric constant. The IGZO TFT based on anodic Al2O3 shows a mobility of as high as 21.6 cm2Vhboxs, an on/off current ratio of as high as 108, and a threshold voltage of only 2 V. Further studies show that the anodic Al2O3 gate dielectric is very compatible with the IGZO semiconductor, and both the channel resistance and contact resistance are lower than those of the TFTs based on thermally grown SiO2 gate dielectric. © 2010 IEEE.