Long-lived quantum coherence and nonlinear properties of a two-dimensional semiconductor quantum well

Abstract

In this paper, we present an analytical solution to the Maxwell–Bloch equations of the two-level semiconductor quantum well, G a A s / A l G a A s . In addition, we discuss the effects of coherent Rabi oscillations Ω ( t ) and the frequency of the semiconductor system ν ( t ) on atomic occupation probabilities, ρ 11 ( t ) and ρ 22 ( t ) , population inversion, ρ z ( t ) , and information entropies, H ( σ x ) , H ( σ y ) , and H ( σ z ) . We observe clearly the emergence of long-lived quantum coherence and the decay in curves for some special cases of Ω ( t ) and ν ( t ) . Also, we show that the dynamic nonlinear properties of the system can be controlled by changing the values of the coherent Rabi oscillations Ω ( t ) and the frequency of the semiconductor system ν ( t ) . Due to the lack of mathematical treatment of such systems, our study promises significant advantages for a large number of nonlinear dynamic systems, opening up a wide range of applications for semiconductor quantum wells.