Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAs

Abstract

Long-wavelength (≳1.1 μm) optical emission has been achieved in pseudomorphic InGaAs-on-GaAs quantum-well structure by replacing InGaAs random alloy quantum well with (InAs)n/(GaAs)n short period superlattice (SPS). With the same quantum-well width, the photoluminescence peak energy of the SPS structure is always smaller than that of the In 0.5Ga0.5As random-alloy structure. Strong photoluminescence was observed in (InAs)1/(GaAs)1 SPS quantum wells with thickness up to 84 Å. The longest optical-emission wavelength observed in (InAs)1/(GaAs)1 SPS quantum-well structures at room temperature was 1.34 μm.