Photonics integrated circuits using Al x Ga1-xN based UVC light-emitting diodes, photodetectors and waveguides

Abstract

We report on a study of UVC photonics integrated circuit consisting of monolithically integrated Al x Ga1-xN multiple quantum wells based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 μm thick n-Al0.65Ga0.35N waveguide over an AlN (3.5 μm thick) clad layer. Using the integrated devices, we estimated the multi-mode ridge waveguide losses to be 23 cm-1 at λ emission ∼ 280 nm. We also measured that approximately 80% of the guided light was confined in the n +-Al0.65Ga0.35N layer, 7% in the underlying AlN cladding and the remaining 13% in the double-side polished sapphire substrate.