Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth

Abstract

Epitaxial layer overgrowth (ELOG) is a common technique for dislocation density reduction in GaN heteroepitaxy. Here, scanning capacitance microscopy is used to study the variations in unintentional doping arising from the ELOG process and reveals facet-dependent incorporation of n-type dopants during the initial regrowth of GaN, and then p-type doping arising from the use of bis(cyclopentadienyl)magnesium to enhance lateral growth during the coalescence stage. © 2010 IOP Publishing Ltd.