Auger recombination rates in dilute-As GaNAs semiconductor

Abstract

The evaluation of Auger recombination process for dilute-As GaNAs alloy is presented. Our analysis indicates the suppression of interband Auger recombination mechanism in dilute-As GaNAs alloy in the green spectral regime. The interband Auger coefficient in dilute-As GaNAs alloy is shown as two orders of magnitude lower than that of its corresponding intraband Auger rate. Our results confirm that the second conduction band has a negligible effect on the interband Auger process in dilute-As GaNAs alloy due to the non-resonant condition of the process. Our findings show the importance of dilute-As GaNAs as an alternative visible material with low Auger recombination rates.