Abstract
Au doped CdS polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdS-Cd-Au target. Elemental Cd and Au were placed onto the CdS target covering small areas. The electrical, structural, and optical properties were analyzed as a function of Au content. The Au doped CdS polycrystalline films showed a p-type semiconductor nature. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Au incorporation within the CdS lattice. In both cases, the changes were of several orders of magnitude. © Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales.
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Becerril, M., Silva-López, H., Zelaya-Angel, O., & Vargas-García, J. R. (2012). Au doping of CdS polycrystalline films prepared by co-sputtering of CdS-Cd-Au targets. Superficies y Vacio, 25(4), 214–217. https://doi.org/10.47566/2012_syv25_1-040214
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