X-ray induced radiation damage in segmented p+n silicon sensors

Abstract

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which have to meet extraordinary requirements for experiments at the XFEL. This paper shortly describes the requirements and challenges for silicon sensors at the EuropeanXFEL and addresses the efforts made by the detector group of Hamburg University for the sensor development. In particular, the main results on the X-ray induced radiation damage are presented.