Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits

Abstract

In this Letter, ambipolar transport properties of a bilayer of In2 O3 and a pentacene heterostructure have been realized. While In2 O3 thin film transistors exhibited a n -channel behavior, pentacene presumed p -channel characteristics on bare Si O2 p-Si substrates. However, when a bilayer of In2 O3 /pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n - and p -channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits. © 2008 American Institute of Physics.