High carrier density, electrostatic doping in organic single crystal semiconductors using electret polymers

Abstract

Control of the carrier density with high doping levels is a fundamental technology in semiconductor processing. However, unavoidable structural disorder in organic semiconductors can be introduced by chemical doping methods. Here, we synthesize a novel class of ionic polymers that generate a quasi-permanent electric field, and demonstrate that organic semiconductors in proximity to the ionic polymer can be electrostatically doped with significantly high carrier densities up to 5.6 × 1013 cm-2, which results in a low sheet resistance of ca. 60 kΩ. Electret doping presented here is expected to lead to an in-depth understanding of electric phase transitions in organic semiconductors.