Abstract
A 16 × 16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6 × 107 cmHz1/2W-1 have been realized with a sensing area of 75 × 75 μ m2.
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CITATION STYLE
Fujitsuka, N., Sakata, J., Miyachi, Y., Mizuno, K., Ohtsuka, K., Taga, Y., & Tabata, O. (1997). Monolithic pyroelectric infrared image sensor using PVDF thin film. In International Conference on Solid-State Sensors and Actuators, Proceedings (Vol. 2, pp. 1237–1240). IEEE. https://doi.org/10.1541/ieejsmas.117.607
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