Abstract
Epitaxial alignment has been obtained by means of grain growth in polycrystalline films deposited on single-crystal substrates. A theory for epitaxial grain growth is outlined and results given for experiments on Au, Al, Cu, and Ag films on vacuum-cleaved NaCl, KBr, KCl, or mica. Epitaxial grain growth provides a fundamentally different alternative to conventional epitaxy, and can lead to very thin films with improved continuity and crystalline perfection, as well as non-lattice-matched orientations.
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CITATION STYLE
Thompson, C. V., Floro, J., & Smith, H. I. (1990). Epitaxial grain growth in thin metal films. Journal of Applied Physics, 67(9), 4099–4104. https://doi.org/10.1063/1.344969
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