A large memory window and low power consumption self-rectifying memristor for electronic synapse

Abstract

Self-rectifying memristor has no need for selector devices, but possesses the one-way transmission behaviour and multi-level non-volatile memory characteristics, which makes it a promising candidate for electronic synapse. In this letter, the authors propose a novel self-rectifying memristor based on a Pt/Hf0.5Zr0.5O2/TiN structure. The devices show large memory window (104) and high rectifying ratio (104), which can block the sneak current in a passive crossbar array without any additional hardware overhead. Moreover, the devices demonstrate excellent multi-level states modulation capability, low power consumption, high endurance and long retention. The final benchmark demonstrates that the proposed Pt/Hf0.5Zr0.5O2/TiN self-rectifying memristor is a promising candidate for electronic synapse application.