Incorporation of carbon quantum-dot films with silicon substrates for improved photovoltaic performances

Abstract

Employment of fluorine-ion doped carbon quantum dot (FCQD) films with silicon (Si) substrates is realized via the facile solution process that exhibits the remarkable photovoltaic characterizations. In-depth materials and cell characterizations are performed, and the improvement of charge separation at FCQD/Si interfaces compared with undoped CQD/Si cases are experimentally elucidated, showing the conversion efficiency of 13.6 %, approximately 2 times higher than undoped CQD-based solar cells with conversion efficiency of 6.8%. The results are of great importance for QD-based light-harvesting and optoelectronic applications.