Evaluation of optical and electrical properties of TiO2 thin films doped Cu ions

Abstract

Titanium oxide (TiO2) films have been deposited on glass substrate by DC sputtering equipment. Homemade ion implantation machine was used for doping Cu ions on the surface of TiO2. Titanium oxide thin films were doped by using optimum conditions of energies and doses of Cu ions. The first step was varying energies from 60 keV to 80 keV and the second step was vary doses of Cu ions between (2 × 1015- 1 × 1017) ion/cm2 while maintaining the energy fixed at 80 keV. The ion energy was a depth of penetration (Dp) reach to 66 nm. Modification of the TiO2 surface with metal ions was successfully used to enhance the optical and electrical activity of TiO2. The energy gap was decreased from 3.36 eV to 3.21 eV with increasing Cu ions doses. The conductivity of TiO2 film was increased about 10000 times at the dose 2 × 1015 ion/cm2. Transparency decreased about 75%. New peaks Cu2O(200), Cu2O (111), CuO ('202) and Cu2O (220) were observed as a result of doping process. High quality and simple design of thin films play a key role to improve of physical properties.