Broadband perfect optical absorption by coupled semiconductor resonator-based all-dielectric metasurface

Abstract

Resonance absorption mechanism-based metasurface absorbers can realize perfect optical absorption. Further, all-dielectric metasurface absorbers have more extensive applicability than metasurface absorbers that contain metal components. However, the absorption peaks of the all-dielectric metasurface absorbers reported to date are very sharp. In this work, we propose a broadband optical absorption all-dielectric metasurface, where a unit cell of this metasurface is composed of two coupled subwavelength semiconductor resonators arrayed in the direction of the wave vector and embedded in a low-index material. The results indicate that the peak absorption for more than 99% is achieved across a 60 nm bandwidth in the short-wavelength infrared region. This absorption bandwidth is three times that of a metasurface based on the conventional design scheme that consists of only a single layer of semiconductor resonators. Additionally, the coupled semiconductor resonator-based all-dielectric metasurface shows robust perfect absorption properties when the geometrical and material parameters-including the diameter, height, permittivity, and loss tangent of the resonator and the vertical and horizontal distances between the two centers of the coupled resonators-are varied over a wide range. With the convenience of use of existing semiconductor technologies in micro/nano-processing of the surface, this proposed broadband absorption all-dielectric metasurface offers a path toward realizing potential applications in numerous optical devices.