Heteroepitaxial growth of ϵ-Ga2O3 thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition

Abstract

In this study, epitaxial ϵ-Ga2O3 thin films are successfully grown on cubic (111) MgO and (111) yttria-stablized zirconia (YSZ) substrates by mist chemical vapor deposition. Purϵ-phase hexagonal ϵ-Ga2O3 thin films are grown on the two substrates with a c-axis orientation determined by X-ray diffraction (XRD) 2θ-ϵ scanning. XRD pole figure measurements reveal that the in-plane orientation relationship between the (0001) of ϵ-Ga2O3 and the (111) of the two substrates is ϵ-Ga2O3 =1010 k substrates =1 12. Using (111) MgO substrates with a 2.5% lattice mismatch, the epitaxial ϵ-Ga2O3 films are successfully grown at a low temperature of 400 °C. The optical direct and indirect bandgaps of pure ϵ-Ga2O3 thin films are estimated as 5.0 and 4.5 eV, respectively.