Simulation of Electrical Characteristics of Gate All around Silicon Nanowire Field Effect Transistor using Extended Hückel Theory Based Semi Empirical Approach

Abstract

Gate All Around (GAA) FET stands out as one of the most promising FET designs to replace the currently planar MOSFETs due to its ability to provide better gate control and better immunity to short channel effects. .This paper reports the electrical characteristics of GAA Silicon Nanowire Field Effect Transistor obtained using Extended Huckel Theory based Semi Empirical Method. The physics behind the Semi Empirical method has been presented in brief. The nanowire transistor has been simulated with two different gate dielectrics (SiO2 & ZrO2) and the electrical characteristics resulting from the two structures have been compared for power efficiency. A comparison of off-state current and off-state channel conductance between the two nanowire transistor structures has been presented towards the end of the paper that demonstrates that ZrO2 gate dielectric based silicon nanowire transistor is power efficient than its counterpart with SiO2 gate dielectric.